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MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
DESCRIPTION
The MGF0805A, GaAs FET with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. Gate Mark Round Corner
FEATURES
* High output power : Po = 36.5 dBm (typ.) * High power added efficiency : add = 50 % (typ.) * Hermetic package * Designed for use in Class AB linear amplifiers
APPLICATIONS
* L/S band power amplifiers
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds = 10 V * Ids = 400 mA * Rg = 100
Packaging Tape & Reel (1000 pcs) Absolute maximum ratings (Ta = 25 C)
Symbol
VDS VGS ID PT IGR IGF Tch Tstg
Parameter
Drain to Source Voltage Gate to Source Voltage Drain current Total power dissipation Reverse gate current Forward gate current Channel temperature Storage temperature
Ratings
15 -5 2.5 21 - 10 21 175 - 55 to +150
Unit
V V A W mA mA C C
4.0 mm
Package Outline
(GF-50 Style)
Electrical characteristics ( Ta = 25 C)
Symbol
IDSS VGS(off) gm Po add GLP Rth(ch-c)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added efficiency Linear power gain Thermal resistance *1
Test conditions
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 mA VDS = 10 V, IDS = 400 mA VDS = 10 V, IDQ = 400 mA, f = 1.9 GHz, Pin = 22 dBm VDS=10V, IDQ=400mA, f=1.9GHz Vf Method
Limits
Min. - - 0.5 - 35.0 - 13.0 - Typ. 1800 - 1.1 1000 36.5 50 14.5 5 Max. - - 2.0 - - - - 7
4.2 mm Unit
mA V mS dBm % dB C/W
*1 : Channel to case Specifications are subject to change without notice.
1
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ] Outline Drawing
Gate Mark Round Corner Reference Plane
1.15
(1)
4.20
Reference Plane
(2) 4.00 0.80
(1) Gate (2) Drain (3) Source unit: mm
0.30
2.00 0.80
Gate Mark
(1)
(3)
(2) 0.80 3.80 BACK SIDE PATTERN 2 Mitsubishi Electric Sept. / 2009
1.20
2.80
4.00
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ] S-parameters:
Condition: VD = 10 V, ID = 400 mA, Ta = 25 deg. C
Freq.
(GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0
S11
(mag) 0.935 0.942 0.943 0.943 0.943 0.942 0.939 0.939 0.937 0.937 0.935 0.936 0.935 0.932 0.934 0.935 0.933 0.932 0.931 0.931 0.929 0.926 0.924 0.920 (ang) -149.9 -162.4 -169.6 -174.7 -178.5 178.5 175.8 173.1 170.5 168.2 166.2 164.2 162.3 160.6 158.6 156.4 154.4 152.1 149.8 147.3 144.6 141.8 138.9 137.5
S21
(mag) 7.946 5.440 4.092 3.279 2.743 2.348 2.050 1.812 1.639 1.500 1.379 1.277 1.192 1.119 1.059 1.005 0.955 0.910 0.870 0.836 0.808 0.781 0.757 0.742 (ang) 99.7 89.3 82.2 76.7 71.7 67.3 63.0 58.7 53.8 49.9 46.0 42.3 38.5 35.0 31.4 27.4 23.6 19.6 15.7 11.8 7.9 3.7 -0.4 -2.9
S12
(mag) 0.0129 0.0132 0.0134 0.0136 0.0138 0.0140 0.0141 0.0142 0.0146 0.0151 0.0155 0.0159 0.0160 0.0163 0.0167 0.0182 0.0190 0.0199 0.0208 0.0215 0.0232 0.0249 0.0263 0.0281 (ang) 19.0 14.1 12.5 12.0 12.0 12.7 13.2 14.3 14.5 14.9 15.4 15.4 15.9 17.6 20.5 21.4 20.9 20.5 20.2 20.1 21.2 19.2 17.3 17.4
S22
(mag) (ang) 0.740 -176.7 0.740 -179.0 0.733 179.5 0.729 178.4 0.728 177.4 0.732 176.8 0.730 174.7 0.741 173.8 0.737 173.5 0.739 172.7 0.740 172.0 0.745 171.2 0.746 170.3 0.750 169.3 0.753 168.3 0.755 167.0 0.757 165.6 0.758 164.2 0.760 162.7 0.761 161.0 0.762 159.4 0.764 157.8 0.763 156.0 0.767 156.5
Note : Reference plane is shown in Outline Drawing
3
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ] Example of Circuit Schematic and Characteristics : f = 2.6 GHz
Gain (dB) 19 18 17 16 15 14 13 12 11 Pout (dBm) 40 35 30 25 20 15 10 5 0 5 10 15 Pin (dBm) 20 PAE Gain Pout PAE (%) 80 70 60 50 40 30 20 10 0 25
ACP (dBc) 0 -10 -20 -30 -40 -50 -60 -70 15 20 ACP NACP ID
ID (mA) 700 600 500 400 300 200 100 0 35
25 30 Pout (dBm)
Bias condition: VD = 10 V, IDQ = 400 mA, Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
4
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ] Example of Circuit Schematic and Characteristics : f = 2.6 GHz
3.5 3.0 EVM (%) 2.5 2.0 1.5 1.0 0.5 0.0 15 20 25 30 Pout (dBm ) 35 EVM ID 700 600 500 400 300 200 100 0 ID (mA ] Bias condition: VD = 10 V, IDQ = 400 mA Modulation signal: IEEE.802.16 WiMAX A, Downlink, 64QAM3/4
-VG
+VD
100 1000pF 20pF Z15 Input Z14 20pF Z13 Z12 Z11 Z21 MGF0805A 1.5pF 2pF 2pF 1.5pF 1pF Z22 Z23 Z24 Z26 20pF Z25 Output 51 4.7uF 20pF
Z11 to Z26 : Microstrip line ( L x W, Unit: mm )
Z11 : 1.0 x 0.9 Z14 : 3.0 x 0.9 Z22 : 2.1 x 0.9 Z12 : 0.8 x 0.9 Z15 : 17.6 x 0.5 Z23 : 3.2 x 0.9 Z13 : 14.5 x 0.9 Z21 : 1.0 x 0.9 Z24 : 10.0 x 0.9 PCB : BT Resin, r = 3.4, Substrate thickness = 0.4 mm Z25 : 3.0 x 0.9 Z26 : 17.6 x 0.5
5
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ] Example of Circuit Schematic and Characteristics : f = 1.9 GHz
Gain (dB) 19 18 17 16 15 14 13 12 11 Pout (dBm) 40 35 30 25 20 15 10 5 0 5 10 15 Pin (dBm) 20 25 PAE Gain Pout PAE (%) 80 70 60 50 40 30 20 10 0
-40 -50 -60 -70 15 20 25 Pout (dBm) 30 35 ACP NACP 100 0 300 200 ACP (dBc) 0 -10 -20 -30 ID ID (mA) 700 600 500 400
Bias condition: VD = 10 V, IDQ = 400 mA, Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
-VG +VD
51 1000pF 20pF Z15 Input 20pF Z14 Z13 Z12 Z27 21nH
47uF 1000pF 20pF
100
Output 20pF
Z11
Z21 MGF0805A
Z22
Z23
Z24
Z25
Z26
2pF
3pF
3pF
2pF
1pF
Z11 to Z27 : Microstrip line ( L x W, Unit: mm )
Z11 : 1.0 x 0.9 Z14 : 3.0 x 0.9 Z22 : 1.2 x 0.9 Z12 : 5.1 x 0.9 Z15 : 22.0 x 0.5 Z23 : 5.7 x 0.9 Z13 : 9.6 x 0.9 Z21 : 1.0 x 0.9 Z24 : 5.9 x 0.9 PCB : BT Resin, r = 3.4, Substrate thickness = 0.4 mm Z25 : 2.8 x 0.9 Z26 : 3.0 x 0.9 Z27 : 22 x 0.5
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Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ] Example of Circuit Schematic and Characteristics : f = 3.5 GHz
Gain (dB) 16 15 14 13 12 11 10 9 8 Pout (dBm) 40 35 30 25 20 15 10 5 0 10 15 20 Pin (dBm) 25 30 PAE Gain Pout PAE (%) 80 70 60 50 40 30 20 10 0
-40 -50 -60 -70 15 20 25 Pout (dBm) 30 35 ACP 300 200 NACP 100 0 ACP (dBc) 0 -10 -20 -30 ID ID (mA) 700 600 500 400
Bias condition: VD = 10 V, IDQ = 400 mA, Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
-VG +VD
100 1000pF 20pF Z16 Input Z15 20pF Z14 Z13 Z12 Z11 MGF0805A 0.5pF 1pF 1pF 0.5pF 1.5pF 0.5pF Z21 Z22 Z23 Z24 Z26 20pF Z25 Output 51 47uF 20pF
Z11 to Z26 : Microstrip line ( L x W, Unit: mm )
Z11 : 1.0 x 0.9 Z14 : 3.7 x 0.9 Z21 : 1.0 x 0.9 Z12 : 0.8 x 0.9 Z15 : 3.0 x 0.9 Z22 : 0.8 x 0.9 Z13 : 10.8 x 0.9 Z16 : 13.3 x 0.5 Z23 : 9.8 x 0.9 PCB : BT Resin, r = 3.4, Substrate thickness = 0.4 mm Z24 : 4.7 x 0.9 Z25 : 3.0 x 0.9 Z26 : 13.3 x 0.5
7
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers.
Matters of Importance when Using these Materials
1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
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Mitsubishi Electric
Sept. / 2009

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